Ultra- Flat Double-Side Polished (DSP) Silicon Wafers in Stock:
 
Option A:
Size: Four Inch 4'' (100.0 mm); Thickness: 525 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 0.001 - 0.005 Ω·cm
 
Option B:
Size: Four Inch 4'' (100.0 mm); Thickness: 525 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
​
Option C:
Size: Four Inch 4'' (100.0 mm); Thickness: 300 um, Orientation: <100>, 
Type/Dopant: N/Phosphorus-Doped, Resistivity: 1 - 30 Ω·cm
 
Option D:
Size: Four Inch 4'' (100.0 mm); Thickness: 300 um, Orientation: <100>, 
Type/Dopant: N-Type/Phosphorus-Doped, Resistivity: 0.001 - 0.005 Ω·cm
 
Option E:
Size: Four Inch 4'' (100.0 mm); Thickness: 300 um, Orientation: <100>, 
Type/Dopant: P-Type/Boron-Doped, Resistivity: 0.001 - 0.005 Ω·cm
 
Option F:
Size: Four Inch 4'' (100.0 mm); Thickness: 300 um, Orientation: <100>, 
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
 
Option G:
Size: Six Inch 6'' (150.0 mm); Thickness: 650 um, Orientation: <100>, 
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm

Technical Processing Data:
 
Orientation: <100>+/- 0.5°;
TIR < 3 μm, TTV < 10 μm, BOW < 10 μm
Roughness < 0.5 nm;

Volume and Custom Orders Available Upon Request.